Premium
Energy loss function for Si determined from reflection electron energy loss spectra with factor analysis method
Author(s) -
Jin Hua,
Yoshikawa Hideki,
Tanuma Shigeo,
Tougaard Sven
Publication year - 2010
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.3263
Subject(s) - inelastic mean free path , electron energy loss spectroscopy , spectral line , computational physics , mean free path , inelastic scattering , electron , reflection (computer programming) , path loss , atomic physics , inverse , energy (signal processing) , function (biology) , chemistry , scattering , physics , optics , nuclear physics , mathematics , quantum mechanics , computer science , geometry , telecommunications , wireless , programming language , evolutionary biology , biology
The Si energy loss function (ELF) for energy loss Δ E less than 30 eV was obtained from experimental λ( E ) K (Δ E ) distributions using a factor analysis method. λ( E ) K (Δ E ), which are the products of the inelastic mean free path (IMFP) [λ( E )] and the differential inverse IMFPs or inelastic scattering cross sections [ K (Δ E )], were obtained from angle‐resolved REELS at various primary beam energies with QUASES‐XS‐REELS software. The application of the factor analysis method to determine the ELF is described in detail. We performed factor analysis on the data matrix formed by λ( E ) K (Δ E ) spectra to separate surface‐ and bulk‐loss components. Finally, the ELF for Si was derived from extracted bulk‐loss component by an iterative calculation. The resulting ELF is in good agreement with the ELF from Palik's optical data. The suggested approach should be applicable as a general method to determine ELF from REELS. Copyright © 2010 John Wiley & Sons, Ltd.