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Temperature‐dependent profile of the surface states and series resistance in (Ni/Au)/ AlGaN/AlN/GaN heterostructures
Author(s) -
Taşçıoǧlu İ.,
Aydemir U.,
Şafak Y.,
Özbay E.
Publication year - 2010
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.3249
Subject(s) - heterojunction , equivalent series resistance , materials science , condensed matter physics , capacitance , semiconductor , conductance , series (stratigraphy) , admittance , metal , analytical chemistry (journal) , voltage , optoelectronics , chemistry , electrical engineering , physics , metallurgy , electrode , paleontology , chromatography , biology , engineering , electrical impedance
The profile of the interface state densities ( N ss ) and series resistances ( R s ) effect on capacitance–voltage ( C – V ) and conductance‐voltage ( G /ω– V ) of (Ni/Au)/Al x Ga 1− x N/AlN/GaN heterostructures as a function of the temperature have been investigated at 1 MHz. The admittance method allows us to obtain the parameters characterizing the metal/semiconductor interface phenomena as well as the bulk phenomena. The method revealed that the density of interface states decreases with increasing temperature. Such a behavior of N ss can be attributed to reordering and restructure of surface charges. The value of series R s decreases with decreasing temperature. This behavior of R s is in obvious disagreement with that reported in the literature. It is found that the N ss and R s of the structure are important parameters that strongly influence the electrical parameters of (Ni/Au)/Al x Ga 1− x N/AlN/GaN( x = 0.22) heterostructures. In addition, in the forward bias region a negative contribution to the capacitance C has been observed, that decreases with the increasing temperature. Copyright © 2010 John Wiley & Sons, Ltd.