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Study in the oxygen contamination on the surface of CSiC films
Author(s) -
Du J. F.,
Ren D.,
Dai H. Y.,
Zou Y.,
Huang N. K.
Publication year - 2010
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.3153
Subject(s) - oxygen , hydrogen , x ray photoelectron spectroscopy , carbon fibers , adsorption , contamination , chemistry , inorganic chemistry , chemical engineering , materials science , composite material , composite number , organic chemistry , ecology , engineering , biology
Abstract CSiC films were prepared with an ion‐mixing technology and then introduced with hydrogen by using hydrogen ion irradiation or high‐pressure permeation. It is found that the surfaces of the CSiC films are always covered by contamination oxygen. XPS was used to analyze the behavior of the contamination oxygen on the surfaces of the CSiC films before and after hydrogen introduction. The results show that apart from the adsorbed top layer‐containing contaminations like oxygen, carbon, and oxyhydrogen species, the oxygen can react with elements of films and hydrogen. Different carbon–oxygen–hydrogen configurations and CSiO or CSiOH on the subsurfaces can be formed with different hydrogen introduction methods. Also, the thicknesses of these species‐related oxygen on the subsurface of CSiC films are estimated in this article. Copyright © 2009 John Wiley & Sons, Ltd.