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Effects of annealing temperature on electrical and structural properties of Mo/n‐InP (100) Schottky contacts
Author(s) -
Janardhanam V.,
Ashok Kumar A.,
Rajagopal Reddy V.,
Narasimha Reddy P.
Publication year - 2009
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.3114
Subject(s) - annealing (glass) , analytical chemistry (journal) , schottky barrier , phosphide , schottky diode , indium phosphide , secondary ion mass spectrometry , materials science , chemistry , atomic force microscopy , ion , diode , optoelectronics , nanotechnology , metal , gallium arsenide , metallurgy , organic chemistry , chromatography
Abstract The electrical, structural and surface morphological properties of Mo/n‐InP Schottky diodes have been investigated as a function of annealing temperature using current–voltage (I–V), capacitance–voltage (C–V), Secondary Ion Mass Spectroscopy (SIMS), X‐ray diffraction (XRD) and atomic force microscopy (AFM) measurements. The obtained Schottky barrier heights from I–V and C–V measurements for as‐deposited Mo/n‐InP are 0.45 eV and 0.61 eV respectively. Upon annealing at 300 °C in nitrogen atmosphere for 1 min, the barrier height values increased to 0.47 eV (I–V) and 0.68 eV (C–V). When the samples are annealed at temperatures 400 and 500 °C, the barrier height values decrease to 0.46 eV (I–V), 0.44 eV (I–V) and 0.65 eV (C–V), 0.64 eV (C–V). The SIMS and XRD results showed the formation of phosphide phases at the Mo/n‐InP interface, which may be the reason for the decrease in the barrier height for samples annealed at 500 °C. The AFM measurements showed that the surface morphology of Mo contacts on n‐InP is smooth with a root mean square value of 12.7 nm even after annealing at 500 °C. Copyright © 2009 John Wiley & Sons, Ltd.