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Determination of the relative sputtering yield of carbon to tantalum by means of Auger electron spectroscopy depth profiling
Author(s) -
Kotis L.,
Menyhard M.,
Sulyok A.,
Sáfrán G.,
Zalar A.,
Kovač J.,
Panjan P.
Publication year - 2009
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.3101
Subject(s) - auger electron spectroscopy , sputtering , tantalum , analytical chemistry (journal) , chemistry , auger , yield (engineering) , spectroscopy , ion , electron spectroscopy , auger effect , atomic physics , materials science , thin film , metallurgy , physics , nanotechnology , nuclear physics , organic chemistry , chromatography , quantum mechanics
Abstract The relative sputtering yield of carbon with respect to tantalum was determined for 1 keV Ar + ion bombardment in the angular range of 70°–82° (measured from surface normal) by means of Auger electron spectroscopy depth profiling of C/Ta and Ta/C bilayers. The ion bombardment‐induced interface broadening was strongly different for the C/Ta and Ta/C, whereas the C/Ta interface was found to be rather sharp, the Ta/C interface was unusually broad. Still the relative sputtering yields ( Y C / Y Ta ) derived from the Auger electron spectroscopy depth profiles of the two specimens agreed well. The relative sputtering yields obtained were different from those determined earlier on thick layers, calculated by simulation of SRIM2006 and by the fitting equation of Eckstein. The difference increases with increase of angle of incidence. Copyright © 2009 John Wiley & Sons, Ltd.