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The chemical composition and bonding structure of B–C–N–H thin films deposited by reactive magnetron sputtering
Author(s) -
Chen Youming,
Yang Shengrong,
Zhang Junyan
Publication year - 2009
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.3099
Subject(s) - x ray photoelectron spectroscopy , raman spectroscopy , analytical chemistry (journal) , sputter deposition , boron , sputtering , chemical composition , chemistry , volumetric flow rate , chemical bond , fourier transform infrared spectroscopy , cavity magnetron , nitrogen , thin film , crystallography , materials science , chemical engineering , nanotechnology , organic chemistry , optics , physics , quantum mechanics , engineering
Abstract The chemical composition and bonding structures of B–C–N–H films fabricated by medium frequency magnetron sputtering, with N 2 +CH 4 +Ar gas mixture sputtering the boron target, were investigated. XPS and FTIR spectrometric analyses show that the increase of CH 4 flow rate during deposition causes an increase of the C content in the films. The increase in the CH 4 flow rate promotes an increase in the B–C, C–N single and CN double bonds which are the components of the hybridized B–C–N bonding structure. From the results of Raman spectroscopy analysis, it is seen that the intensity of the D band of the films' Raman spectrum decreases with increasing CH 4 flow rate, indicating a decrease of the sp 2 ‐phase content or the sp 2 C cluster size. The decreases of I D / I G also reflect the formation of more boron‐ or nitrogen‐ bound sp 3 ‐coordinated carbons in the films. Copyright © 2009 John Wiley & Sons, Ltd.