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Swift heavy ion induced effects at Mo/Si interface and silicide formation
Author(s) -
Agarwal Garima,
Kulshrestha Vaibhav,
Jain Rajkumar,
Kabiraj D.,
Sulania Indra,
Kulriya Pawan,
Jain I. P.
Publication year - 2009
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.3083
Subject(s) - silicide , swift heavy ion , rutherford backscattering spectrometry , molybdenum , materials science , thin film , analytical chemistry (journal) , irradiation , silicon , thermal diffusivity , ion , chemistry , nanotechnology , metallurgy , fluence , physics , organic chemistry , chromatography , quantum mechanics , nuclear physics
Swift heavy ion (SHI) induced modification at metal/Si interfaces has emerged as an interesting field of research due to its large applications. In this study, we investigate SHI‐induced mixed molybdenum silicide film with ion fluences. The molybdenum thin films were deposited on silicon substrates using e‐beam evaporation at 10 −8 torr vacuum. Thin films were irradiated with Au ions of energy 120 MeV to form molybdenum silicide. The samples were characterized by grazing incidence X‐ray diffraction (GIXRD) technique for the identification of phase formation at the interface. Rutherford backscattering spectrometry (RBS) was used to investigate the elemental distribution in the films. The mixing rate calculations were made and the diffusivity values obtained lead to a transient melt phase formation at the interface according to thermal spike model. Irradiation‐induced effects at surface have been observed and roughness variations at the surface were calculated using atomic force microscopy (AFM) technique. Copyright © 2009 John Wiley & Sons, Ltd.