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Growth behavior of Cu/Al intermetallic compounds in hot‐dip aluminized copper
Author(s) -
Yu Zhen,
Duan Yuping,
Liu Lidong,
Liu Shunhua,
Liu Xujing,
Li Xiaogang
Publication year - 2009
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.3020
Subject(s) - intermetallic , copper , wetting , diffusion , chemistry , metallurgy , aluminium , plating (geology) , aqueous solution , substrate (aquarium) , electrical resistivity and conductivity , analytical chemistry (journal) , materials science , thermodynamics , composite material , chromatography , physics , oceanography , alloy , geophysics , geology , engineering , electrical engineering
Hot‐dipped aluminum copper with plating auxiliary KF is introduced in this work. In this study, the intermetallic layer thickness varies with dipping temperature and time in a linear relationship. The main phases are identified to be CuAl 2 and K 3 AlF 6 by means of X‐ray diffraction. The reaction equations are deduced according to the elements concentration gradient in cross section. The copper diffusion rate in liquid Al is calculated to be 1.13 × 10 −12 m 2 /s by Fick's second law in semi‐infinite solid model, and the obtained conductivity is 1.758–1.767 × 10 −2 Ω mm 2 /m. The results indicate that the interfacial bonding is in a good state and plating auxiliary KF aqueous solution. can significantly improve the substrate wettability. The appropriate hot‐dipping condition for the samples is 953–973 K for 4–8 s. Copyright © 2009 John Wiley & Sons, Ltd.