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Electroless plating of copper on Si(100) surfaces modified by surface‐initiated atom‐transfer radical polymerization of 4‐vinylpyridine
Author(s) -
Li Liang,
Yan Guoping,
Cheng Zhiyu,
Wu Jiangyu,
Yu Xianghua,
Guo Qingzhong
Publication year - 2009
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.2994
Subject(s) - copper , atom transfer radical polymerization , x ray photoelectron spectroscopy , adhesion , chemisorption , polymer chemistry , layer (electronics) , materials science , silicon , copper plating , polymerization , chemical engineering , chemistry , polymer , metallurgy , composite material , organic chemistry , catalysis , electroplating , engineering
Surface‐initiated atom‐transfer radical polymerization (ATRP) of 4‐vinylpyridine (4VP) on a pretreated Si(100) surface was carried out. The composition and topography of the Si(100) surface modified by poly(4‐vinylpyridine) (P4VP) were characterized by XPS and atomic force microscopy (AFM), respectively. The P4VP layer on the Si(100) surface was used not only as chemisorption sites for the palladium complexes without prior sensitization by SnCl 2 solution during the electroless plating, but also as an adhesion promotion layer for the electrolessly deposited copper. The electrolessly deposited copper on the Si–P4VP surface exhibited a 180° peel adhesion strength above 6 N/cm. The adhesion strength was much higher than that of the electrolessly deposited copper to the pristine silicon surface. Copyright © 2008 John Wiley & Sons, Ltd.