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Oxide‐mediated formation of α‐FeSi 2 on Si(001) studied by X‐ray adsorption near edge structure analysis using SPELEEM
Author(s) -
Maeda Fumihiko,
Hibino Hiroki,
Suzuki Satoru,
Guo Fang Zhun
Publication year - 2008
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.2981
Subject(s) - annealing (glass) , oxide , materials science , xanes , adsorption , void (composites) , epitaxy , analytical chemistry (journal) , chemical engineering , layer (electronics) , crystallography , chemistry , nanotechnology , metallurgy , composite material , spectroscopy , physics , chromatography , engineering , quantum mechanics
To investigate the effect of the oxide layer on the oxide‐mediated growth in solid phase epitaxy for the formation of a single‐phase iron disilicides, the annealing processes were analyzed using spectroscopic photoemission and low‐energy electron microscopy for a special surface where oxide areas and clean substrate areas (voids) coexist closely in a micrometer‐order view. From the analysis of high‐resolution X‐ray adsorption near edge structure (XANES), we found that a pure α phase of FeSi 2 was obtained in the oxide area after annealing at 720 °C, although a mixture of its α and β phases was obtained in the void area. This indicates that the oxide layer effectively worked and a single‐phase α‐FeSi 2 was successfully formed by the oxide‐mediated growth. Copyright © 2008 John Wiley & Sons, Ltd.
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