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Surface characterization of the SiO x films prepared by a remote atmospheric pressure plasma jet
Author(s) -
Huang Chun,
Liu ChiHung,
Wu ShinYi
Publication year - 2009
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.2975
Subject(s) - x ray photoelectron spectroscopy , analytical chemistry (journal) , chemical vapor deposition , fourier transform infrared spectroscopy , substrate (aquarium) , deposition (geology) , atmospheric pressure plasma , plasma enhanced chemical vapor deposition , silicon , materials science , thin film , atmospheric pressure , chemical engineering , chemistry , plasma , nanotechnology , metallurgy , environmental chemistry , paleontology , oceanography , physics , quantum mechanics , sediment , geology , engineering , biology
The deposition rate and surface properties of SiO x films were prepared and investigated using remote atmospheric pressure plasma (APP) jet. The APP, generated with low frequency power at 16 kHz, was fed with tetraethoxysilane (TEOS)/air gas mixture. After deposition, the SiO x films were analyzed for chemical characteristics, elemental composition, surface morphology, and hardness. It was found that the deposition substrate temperature is the key factor to affect the deposition rate of remote APP chemical vapor deposition process. Fourier transform infrared (FTIR) spectra indicated that APP deposited SiO x films are an inorganic feature. XPS examination revealed that the SiO x films contained approximately 30% silicon, 58% oxygen and 12% carbon. Atomic forced microscopy (AFM) analysis results indicated a smooth surface of SiO x films in deposition under higher substrate temperature. Also, pencil hardness tests indicated that the hardness of APP deposited SiO x films was greatly improved with increasing substrate temperatures. Copyright © 2008 John Wiley & Sons, Ltd.