Premium
Local characterizations of quaternary AlInGaN/GaN heterostructures using TEM and HAADF‐STEM
Author(s) -
Okuno Hanako,
Takeguchi Masaki,
Mitsuishi Kazutaka,
Irokawa Yoshihiro,
Sakuma Yoshiki,
Furuya Kazuo
Publication year - 2008
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.2960
Subject(s) - scanning transmission electron microscopy , transmission electron microscopy , scanning electron microscope , heterojunction , materials science , spectroscopy , high resolution transmission electron microscopy , analytical chemistry (journal) , energy filtered transmission electron microscopy , microscopy , characterization (materials science) , nitride , crystallography , optoelectronics , chemistry , nanotechnology , optics , composite material , physics , chromatography , quantum mechanics , layer (electronics)
Local characterizations of a quaternary group III nitride material AlInGaN were carried out using electron microscopy. The chemical composition and the lattice parameter of the sample were estimated by a combination of energy dispersive X‐ray spectroscopy and scanning transmission electron microscopy analyses and high‐resolution transmission electron microscopy imaging, respectively. These results correspond well with the nominal composition of bulk sample measured by SIMS with only a few percent of error, indicating the validity of these techniques for the local characterization on this kind of hetero‐structural materials. Copyright © 2008 John Wiley & Sons, Ltd.