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Dynamic computer simulations of Cs incorporation in Si during low‐energy (0.2–3 keV) irradiation
Author(s) -
Gnaser Hubert
Publication year - 2008
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.2909
Subject(s) - irradiation , atomic physics , sputtering , silicon , ion , projectile , yield (engineering) , analytical chemistry (journal) , materials science , chemistry , physics , nuclear physics , thin film , nanotechnology , organic chemistry , chromatography , metallurgy
The incorporation of Cs atoms in silicon was investigated by dynamic computer simulations using the Monte‐Carlo code T‐DYN that takes into account the gradual change of the target composition due to the Cs irradiation. The implantation of Cs atoms at normal incidence was studied for four energies (0.2, 0.5, 1, and 3 keV) and three different Cs surface‐binding energies U Cs (0.4, 0.8, and 2.4 eV). The total implantation fluences were 2 × 10 17 Cs cm −2 for 0.2 keV, 1.5 × 10 17 Cs cm −2 for 0.5 keV, and 1 × 10 17 Cs cm −2 for 1 and 3 keV. At these values, a stationary state has been reached. The steady‐state Cs‐surface concentrations exhibit a pronounced dependence both on impact energy and U Cs , varying between ∼1 (at 0.2 keV and U Cs = 2.4 eV) and ∼0.13 (3 keV and U Cs = 0.4 eV). Under equilibrium, the partial sputtering yield of Si, Y Si , experiences little influence of U Cs , but varies with the Cs energy: at U Cs = 0.8 eV from 0.09 to 1.0 Si atoms/Cs projectile. For all irradiation conditions a strongly preferential sputtering of Cs atoms as compared to Si atoms is found, increasing from 1.8 (at 3 keV and U Cs = 2.4 eV) to 13.3 (at 0.2 keV and U Cs = 0.4 eV). Preferential sputtering of Cs increases with decreasing irradiation energy and decreasing U Cs . Copyright © 2008 John Wiley & Sons, Ltd.