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Surface morphology of Ge‐modified 3C‐SiC/Si films
Author(s) -
Nader Richard,
Kazan Michel,
Moussaed Elie,
Stauden Thomas,
Niebelschütz Merten,
Masri Pierre,
Pezoldt Jörg
Publication year - 2008
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.2895
Subject(s) - overlayer , materials science , silicon carbide , reflection high energy electron diffraction , germanium , silicon , morphology (biology) , electron diffraction , crystallography , surface roughness , layer (electronics) , surface finish , diffraction , analytical chemistry (journal) , nanotechnology , chemistry , composite material , optics , optoelectronics , epitaxy , physics , chromatography , biology , genetics
The influence of Ge deposition prior to carbon interaction with 3° off‐axis Si(111) substrates on the structural and morphological properties of the formed silicon carbide (SiC) layer is studied. In situ reflection high‐energy electron diffraction (RHEED) and X‐ray diffraction (XRD) revealed the formation of the cubic silicon carbide (3C‐SiC) modification. In situ spectroscopic ellipsometry measurements revealed a decreasing 3C‐SiC thickness with increasing Ge predeposition. Atomic force microscopy (AFM) studies revealed that the surface overlayer morphology is mainly formed by periodic step arrangements whose relevant geometric parameters, i.e. lateral separation, height and terrace width, depend on the Ge content. Besides the changes of the step morphology, the surface roughness and the grain size and the strain of the formed 3C‐SiC decreases with increasing germanium precoverage. Copyright © 2008 John Wiley & Sons, Ltd.