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Interfacial properties of thermally oxidized Ta 2 Si on Si
Author(s) -
PérezTomás A.,
Jennings M. R.,
Mawby P. A.,
Millán J.,
Godig P.,
Montserrat J.,
Rossinyol E.,
Vennegues P.,
Stoemenos J.
Publication year - 2008
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.2859
Subject(s) - tantalum pentoxide , materials science , tantalum , dielectric , tantalum nitride , silicon , silicide , microelectronics , thermal oxidation , silicon carbide , chemical engineering , substrate (aquarium) , layer (electronics) , nanotechnology , metallurgy , optoelectronics , oceanography , geology , engineering
Many refractory metal silicides have received great attention due to their potential for innovative developments in the silicon‐based microelectronic industry. However, tantalum silicide, Ta 2 Si, has remained practically unnoticed since its successful application in silicon carbide technology as a simple route for a high‐ k dielectric formation. The thermal oxidation of Ta 2 Si produces high‐ k dielectric layers, (OTa 2 Si)‐based on a combination of Ta 2 O 5 and SiO 2 . In this work, we investigate the interfacial properties of thermally oxidized (850–1050 °C) Ta 2 Si on commercial silicon substrates. The implications of diffusion processes in the dielectric properties of an oxidized layer are analyzed. In particular, we observe migration of tantalum pentoxide nanocrystals into the substrate with increasing oxidation temperature. An estimation of the insulator charge and interfacial OTa 2 Si/Si trap density is also presented. Copyright © 2008 John Wiley & Sons, Ltd.