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Coherent x‐ray diffraction measurements of Cu thin lines
Author(s) -
Takahashi Yukio,
Furukawa Hayato,
Kubo Hideto,
Yamauchi Kazuto,
Nishino Yoshinori,
Ishikawa Tetsuya,
Matsubara Eiichiro
Publication year - 2008
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.2853
Subject(s) - electromigration , diffraction , thin film , scanning electron microscope , synchrotron , materials science , nanometre , x ray crystallography , evaporation , optics , analytical chemistry (journal) , chemistry , nanotechnology , physics , composite material , thermodynamics , chromatography
1‐µm‐thick Cu thin lines with adjacent connections, which simulate via structures in large‐scale integration circuits, were fabricated on Si 3 N 4 membranes by both electron‐beam evaporation and a focused ion beam for coherent x‐ray diffraction measurements. A direct current was applied to a Cu thin line to prepare an electromigration sample. In the scanning electron microscope image of the electromigration sample, a roughness of a few hundred nanometers was observed on the surface around the via structures. Coherent x‐ray diffraction patterns of both the thin line and electromigration samples were measured using synchrotron x‐rays at SPring‐8. Characteristic diffraction patterns resulting from both the shape of the Cu thin lines and the defects around the via structures formed by the application of the current were observed. Copyright © 2008 John Wiley & Sons, Ltd.