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Short‐circuit diffusion of ultrasonic bonding interfaces in microelectronic packaging
Author(s) -
Li Junhui,
Han Lei,
Zhong Jue
Publication year - 2008
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.2840
Subject(s) - ultrasonic sensor , intermetallic , diffusion bonding , materials science , high resolution transmission electron microscopy , dislocation , diffusion , microelectronics , crystallography , transmission electron microscopy , composite material , nanotechnology , chemistry , acoustics , thermodynamics , alloy , physics
To enhance the development of ultrasonic bonding, an improved understanding of the process taking place at the bond interface is needed. In this article, cross‐section features of an ultrasonic bonding area were inspected using a high resolution transmission electron microscope (HRTEM). Results show that ultrasonic vibration activates dislocations inside the metal crystalline lattice, which are the fast diffusion channels. Diffusion mechanism of dislocation channels in ultrasonic bonding is more prominent than crystal diffusion when the temperature is relatively low. For the given ultrasonic bonding parameters, depth of atom diffusion at interface of ultrasonic bonding was about 200 nm, and it is an intermetallic compound of AuAl 2 at AuAl diffusing interface. These will be helpful for further analysis. Copyright © 2008 John Wiley & Sons, Ltd.