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Interface properties and effective work function of Sb‐predoped fully silicided NiSi gate
Author(s) -
Hosoi Takuji,
Sano Kosuke,
Ohta Akio,
Makihara Katsunori,
Kaku Hirotaka,
Miyazaki Seiichi,
Shibahara Kentaro
Publication year - 2008
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.2827
Subject(s) - x ray photoelectron spectroscopy , work function , materials science , oxide , interface (matter) , work (physics) , metal gate , layer (electronics) , semiconductor , metal , optoelectronics , gate oxide , doping , analytical chemistry (journal) , nanotechnology , chemical engineering , chemistry , electrical engineering , metallurgy , transistor , physics , composite material , engineering , capillary number , voltage , capillary action , chromatography , thermodynamics
X‐ray photoelectron spectroscopy (XPS) analysis of Sb‐predoped fully silicided (FUSI) NiSi gate metal‐oxide‐semiconductor structure was carried out to evaluate the chemical bonding states and location of Sb pileup at NiSi/SiO 2 interface. The results reveal that Sb atoms encroach into the SiO 2 layer and that their pileup is formed at about 3 nm beneath the NiSi/SiO 2 interface. Direct measurement of the work function of Sb‐doped FUSI NiSi gate by XPS suggests that the work function is identical to its original value without the Sb pileup located inside the gate oxide. Copyright © 2008 John Wiley & Sons, Ltd.