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Structure analysis of SiCGe films grown on SiC
Author(s) -
Lianbi Li,
Zhiming Chen,
Tao Lin,
Hongbin Pu,
Jia Li,
Qingmin Li
Publication year - 2008
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.2806
Subject(s) - transmission electron microscopy , island growth , thin film , materials science , layer (electronics) , diamond , crystallography , condensed matter physics , nanotechnology , chemistry , composite material , epitaxy , physics
The island growth of SiCGe films on SiC at different temperatures has been investigated by SEM and transmission electron microscope (TEM). The island growth of SiCGe thin films depends on the processing parameter such as the growth temperature and follows the Stranski‐Krastanov (SK) mode. When the growth temperature is comparatively low, the thin film has two types of islands: one is a SiGe sphere‐like island of diamond‐cubic structure; another is a SiCGe cascading triangular island of zinc‐blende structure. As the growth temperature increases, the quantity of the sphere‐like islands reduces, while that of the cascading triangular islands increases. When the growth temperature is about 1060 °C, only cascading triangular islands are observed on the surface of the thin film, and the thickness of the 2D interfacial growth layer formed at the initial stage of the growth process is about 40 nm, which is twice of that grown at low temperature. Copyright © 2008 John Wiley & Sons, Ltd.