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Investigation of AG(I) oxide films by combination of it RRDE and photopotential spectroscopy
Author(s) -
Vvedenskii Alexander,
Grushevskaya Svetlana,
Kudryashov Dmitrii,
Ganzha Sergei
Publication year - 2008
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.2737
Subject(s) - dissolution , oxide , chemistry , crystallite , monocrystalline silicon , polarization (electrochemistry) , anode , phase (matter) , analytical chemistry (journal) , inorganic chemistry , silicon , crystallography , electrode , organic chemistry
The RRDE multicycle chronoammetry makes it possible to obtain separately the partial currents of silver ionization, anodic oxide formation, and chemical oxide dissolution. In the range of low anodic potentials (0.48–0.51 V), the process of active silver dissolution from the open parts of the surface and through the pores of oxide film prevails; the phase formation current drops fast. At higher potentials (0.52–0.53 V), the phase formation current prevails and noticeably exceeds the rate of the chemical oxide dissolution. The thickness of Ag 2 O film rapidly increases; and the net phase formation current is close to 100% during the whole period of polarization. Ag(I) oxide is an n‐type semiconductor with an excess of silver atoms. Their concentration in the oxide film formed on monocrystalline Ag(111), Ag(110), and Ag(100) is less than in the film formed on polycrystalline Ag. Copyright © 2008 John Wiley & Sons, Ltd.