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Initial growth of W‐based films deposited on Si studied with ARXPS
Author(s) -
Oswald S.,
Rittrich D.,
Zahn W.
Publication year - 2008
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.2648
Subject(s) - x ray photoelectron spectroscopy , nanometre , analytical chemistry (journal) , sputtering , materials science , oxide , monolayer , sputter deposition , layer (electronics) , chemistry , chemical engineering , thin film , nanotechnology , metallurgy , composite material , environmental chemistry , engineering
W and WN films with thicknesses of less than one monolayer up to some nanometers were deposited by magnetron sputtering. The samples were transferred after deposition immediately into an analysis chamber without breaking the vacuum to avoid oxide formation and contamination. Analysis was done by means of XPS for elemental and bonding state characterization and angle‐resolved XPS (ARXPS) for nondestructive depth profiling. Phase formation and morphology were studied during the first stages of layer growth. Influences of the residual gas atmosphere are discussed. Copyright © 2008 John Wiley & Sons, Ltd.