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Monte Carlo computations of the electron backscattering coefficient for bulk targets and surface thin films
Author(s) -
Dapor Maurizio
Publication year - 2008
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.2637
Subject(s) - monte carlo method , stopping power , electron , scattering , computational physics , electron scattering , computation , elastic scattering , physics , range (aeronautics) , atomic physics , thin film , dynamic monte carlo method , materials science , optics , nuclear physics , quantum mechanics , mathematics , statistics , algorithm , detector , composite material
Abstract Monte Carlo computations of the electron backscattering coefficient as a function of the primary energy in the range 500 eV–5 keV for several bulk targets (Al, Si, Cr, Ni, Cu, Ge, Au) are provided. Monte Carlo simulated backscattering coefficients from several surface thin layers are also provided as a function of the electron primary energy and film thicknesses. While the elastic scattering cross‐sections have been calculated by the relativistic partial wave expansion method, the stopping power data utilized by the Monte Carlo code are taken from the literature. Copyright © 2008 John Wiley & Sons, Ltd.