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Combination of high‐resolution RBS and angle‐resolved XPS: accurate depth profiling of chemical states
Author(s) -
Kimura Kenji,
Nakajima Kaoru,
Zhao Ming,
Nohira Hiroshi,
Hattori Takeo,
Kobata Masaaki,
Ikenaga Eiji,
Kim Jung Jin,
Kobayashi Keisuke,
Conard Thierry,
Vandervorst Wilfried
Publication year - 2008
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.2628
Subject(s) - x ray photoelectron spectroscopy , photoelectric effect , analytical chemistry (journal) , chemical state , profiling (computer programming) , high resolution , chemical composition , materials science , attenuation length , attenuation , chemistry , nuclear magnetic resonance , optics , optoelectronics , physics , computer science , remote sensing , organic chemistry , chromatography , geology , operating system
A new method for the combination analysis of high‐resolution Rutherford backscattering spectroscopy (HRBS) and angle‐resolved X‐ray photoelectron spectroscopy (AR‐XPS) is proposed for accurate depth profiling of chemical states. In this method, attenuation lengths (ALs) for the photoelectrons are first determined so that the AR‐XPS result is consistent with the HRBS result. Depth profiling of the chemical states are then performed in the AR‐XPS analysis using the composition‐depth profiles obtained by HRBS as constrained conditions. This method is successfully applied to Hf‐based gate stack structures demonstrating its feasibility. Copyright © 2008 John Wiley & Sons, Ltd.