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Combined IR and XPS analysis of the native (1 0 0) surface of single‐crystalline silicon after HF aq etching
Author(s) -
Cerofolini G. F.,
Giussani A.,
Carone Fabiani F.,
Modelli A.,
Mascolo D.,
Ruggiero D.,
Narducci D.,
Romano E.
Publication year - 2007
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.2599
Subject(s) - x ray photoelectron spectroscopy , silicon , etching (microfabrication) , stoichiometry , aqueous solution , analytical chemistry (journal) , infrared spectroscopy , infrared , chemistry , materials science , chemical engineering , optics , organic chemistry , physics , layer (electronics) , engineering
A combined analysis, based on angle‐resolved X‐ray photoelectron spectroscopy and multiple‐internal‐reflection infrared spectroscopy, of the (1 0 0) silicon surface after etching in dilute aqueous solution of HF is presented. The analysis shows that the surface is mainly formed by a heterogeneous distribution of SiH, SiH 2 and SiH 3 terminations, but contains (in addition to sub‐stoichiometric oxidized silicon) a form of reduced silicon, not consistent with the currently accepted picture of the native HF aq ‐etched surface. Copyright © 2007 John Wiley & Sons, Ltd.