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Understanding delamination in microelectronic devices using AES, XPS and chemometrics
Author(s) -
Piao Hong,
Le Tarte Laurie,
Hennessy William A.,
Fairley N.
Publication year - 2007
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.2555
Subject(s) - x ray photoelectron spectroscopy , microelectronics , chemometrics , principal component analysis , auger electron spectroscopy , analytical chemistry (journal) , computer science , multispectral image , materials science , chemistry , nanotechnology , artificial intelligence , engineering , physics , chemical engineering , environmental chemistry , machine learning , nuclear physics
The recent development of XPS instrumentation with near‐micron spatial resolution has advanced the capability of elemental and chemical‐state imaging accompanied by small‐area analysis (down to 15 µm). In this paper, the combined use of X‐ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) at enhanced spatial resolution is shown to have significantly improved the understanding of interfacial delamination and related problems encountered in the production of electronic devices in the field of microelectronics. An example of the application of surface analysis for ITO/Mo adhesion problems will be presented. The mathematical procedure using principal component analysis (PCA) in the reduction of noise in XPS images will also be described. The dramatic improvements in the image contrast and chemical component determination from multispectral image data sets will be presented. This study is intended to explore the contributions given by advanced surface analysis tools to solve real‐world problems. Copyright © 2007 John Wiley & Sons, Ltd.