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Adsorption of triethygermane on Si(100): thermal and nonthermal channels for ethyl ligand removal/dissociation
Author(s) -
Brickman A.,
Yeninas S.,
Lozano J.,
Craig J. H.
Publication year - 2006
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.2462
Subject(s) - desorption , x ray photoelectron spectroscopy , chemistry , thermal desorption spectroscopy , adsorption , thermal desorption , dissociation (chemistry) , high resolution electron energy loss spectroscopy , analytical chemistry (journal) , electron transfer , photochemistry , electron energy loss spectroscopy , electron , organic chemistry , chemical engineering , physics , quantum mechanics , engineering
Abstract Adsorption of triethylgemane (TEG) on the Si(100) surface at 100 K has been studied using a variety of surface‐sensitive spectroscopies. Thermally and electronically desorbed species were analyzed using temperature‐programmed desorption (TPD) and electron‐stimulated desorption (ESD) techniques. Electronically desorbed ions (H + ) were analyzed using a time‐of‐flight technique (TOF) and time evolution studies were conducted on desorbing neutral species. Direct analysis of surface species were carried out using X‐ray photoelectron spectroscopy (XPS) and high‐resolution electron energy loss (HREELS) spectroscopy. Evidence is offered for (1) an electron‐induced channel for direct ethylene desorption via a β‐hydride elimination process; (2) an electron‐stimulated transfer of ethyl ligands from a Ge to a Si site; and (3) both thermal‐ and electron‐stimulated desorption of methyl groups. Copyright © 2006 John Wiley & Sons, Ltd.