Fine pattern fabrication on SnO 2 :Sb thin films formed by the sol–gel process

The effects of UV irradiation on the properties of Sb 5+ doped gel films were studied, which were prepared from stannic chloride (SnCl 4 ·5H 2 O) and sodium alkoxide (NaOR) modified with benzytone (BzAcH). It was found that the absorption peak at around 335 nm due to the π → π* transition showed the formation of a chelate ring to Sn. The intensity of the absorption band decreased with UV light irradiation at 365 nm from a high‐pressure mercury lamp (250W). This finding showed that the SnO 2 :Sb gel films modified with BzAcH were photosensitive to UV light. Additionally, this finding was applied to the fabrication of patterns on the SnO 2 :Sb thin films. A gel film was irradiated through a mask and leached in water. Then a positive pattern was formed on the SnO 2 :Sb thin films attached to the substrate. After heat treatment, the SnO 2 :Sb gel films changed into transparent conductive films with an average conductivity of 1.20 × 10 −2 Ω cm and with a transmission of 97.1%. Copyright © 2006 John Wiley & Sons, Ltd.