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Electronic structure of ultrathin Si oxynitrides
Author(s) -
Jin Hua,
Oh Suhk Kun,
Kang Hee Jae
Publication year - 2006
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.2435
Subject(s) - x ray photoelectron spectroscopy , thin film , band gap , materials science , nitride , silicon nitride , silicon oxynitride , photoemission spectroscopy , analytical chemistry (journal) , silicon , optoelectronics , nanotechnology , chemistry , layer (electronics) , nuclear magnetic resonance , physics , chromatography
We have investigated the chemical states and the band gap of ultrathin Si oxynitrides on Si(100) by X‐ray photoemission spectroscopy (XPS) and reflection electron energy loss spectroscopy (REELS). Silicon oxynitride thin films were grown by plasma‐nitridation and annealed‐nitridation treatment. XPS results show that for the annealed‐nitride SiON thin films, Si 3 N and N(SiO x ) 3 states exist at the interface, while for the plasma‐nitride SiON thin films, Si 3 N, N(SiO x ) 3 and SiNO states exist at the surface with trapped N 2 molecules. The band gap for the annealed‐nitride SiON thin film is 8.9 eV at the surface but it is reduced to about 8.45 eV at the interface. Meanwhile, the band gap for the plasma‐nitride SiON thin film is 7.4 eV. In addition, REELS turns out to be an excellent method to obtain the band gap and electronic structure in oxide thin films. Copyright © 2006 John Wiley & Sons, Ltd.