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Characteristics of a cluster‐ion beam of Os 3 (CO) n + ( n = 7 or 8) for low‐damage sputtering
Author(s) -
Fujiwara Yukio,
Kondou Kouji,
Teranishi Yoshikazu,
aka Hidehiko,
Fujimoto Toshiyuki,
Kurokawa Akira,
Ichimura Shingo,
Tomita Mitsuhiro
Publication year - 2006
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.2423
Subject(s) - sputtering , silicon , ion , atomic physics , analytical chemistry (journal) , yield (engineering) , ion beam , acceleration voltage , cluster (spacecraft) , chemistry , kinetic energy , beam (structure) , atom (system on chip) , materials science , thin film , physics , nuclear physics , electron , nanotechnology , cathode ray , optics , organic chemistry , chromatography , quantum mechanics , computer science , embedded system , metallurgy , programming language
A cluster‐ion source has been developed to produce stable ion beams of metal‐cluster‐complex ions. As a metal cluster complex, triosmium dodecacarbonyl, Os 3 (CO) 12 , was used, which has a molecular weight of 906.7. Using the ion source, energy dependence of beam current and sputtering yield of silicon bombarded with Os 3 (CO) n + ( n = 7–8) were investigated at beam energies from 2 to 10 keV under the normal incidence condition. By high‐resolution Rutherford backscattering spectrometry (HR‐RBS), a silicon target bombarded with the normally incident Os 3 (CO) 7–8 + ions at 10 keV with oxygen flooding at 5 × 10 −4 Pa was analyzed. The experimental results showed that the ion‐beam current increased almost linearly with the acceleration voltage. It was found that the sputtering yields of silicon with Os 3 (CO) 7–8 + ions varied substantially with beam energy. The sputtering yield with Os 3 (CO) 7–8 + at 10 keV was higher than that with SF 5 + or Ar + by a factor of 3–20, whereas the yield at 3 keV was lower than that with Ar + . In the case of 2 keV, deposition was found to occur on the silicon surface. The substantial variation in the sputtering yield with beam energy would arise from the lower kinetic energy of each atom constituting the metal‐cluster‐complex ions. From HR‐RBS results, it was confirmed that the constituent atoms of the Os 3 (CO) 7–8 + ions, Os, C, and O, were implanted into the silicon target. The observed depth profiles of Os and C atoms were in good agreement with results of TRIM simulation, while that of the O atom was significantly different from the simulation results. The depth profile of the O atom was examined in terms of oxygen diffusion and implantation. Copyright © 2006 John Wiley & Sons, Ltd.