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Enhanced diffusion of boron in silicon by cw CO 2 laser irradiation
Author(s) -
YamadaKaneta H.,
Tanahashi K.,
Kakimoto K.,
Suto S.
Publication year - 2006
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.2411
Subject(s) - irradiation , boron , annealing (glass) , laser , silicon , diffusion , materials science , oxide , analytical chemistry (journal) , radiochemistry , chemistry , optoelectronics , optics , metallurgy , nuclear physics , physics , organic chemistry , chromatography , thermodynamics
We investigated the diffusion of boron (B) by the irradiation with cw CO 2 laser light. The enhanced diffusion of B was observed by irradiating with the laser light during annealing in Ar/O 2 ambient. We found that irradiation with laser light had the effect of enhancement on the growth of the oxide layer. The possible mechanism is that the excess self‐interstitials injected by oxidation at the laser‐irradiated point enhance the diffusion of B. Copyright © 2006 John Wiley & Sons, Ltd.