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Monte Carlo simulation of low–medium energy electrons backscattered from C/Al double layer thin films
Author(s) -
Dapor Maurizio
Publication year - 2006
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.2370
Subject(s) - monte carlo method , thin film , electron , materials science , layer (electronics) , optics , beam (structure) , energy (signal processing) , cathode ray , computational physics , physics , nanotechnology , nuclear physics , statistics , mathematics , quantum mechanics
The backscattering coefficient of low–medium energy electron beams (from 250 to 10 000 eV) impinging on C/Al double layered thin films was investigated by a Monte Carlo simulation. The aim of the research was to study the behaviour of the backscattering coefficient as a function of the beam primary energy and the thicknesses of the two layers. The backscattering coefficient as a function of the primary energy presents features that can be used to evaluate the thicknesses of the two layers. Copyright © 2006 John Wiley & Sons, Ltd.