XRD, AFM and IR investigations of ordered AlGaAs 2  phase in epitaxial Al  x  Ga 1– x  As/GaAs (100) heterostructures | Zendy

Domashevskaya E. P. | Zendy; Seredin P. V. | Zendy; Lukin A. N. | Zendy; Bityutskaya L. A. | Zendy; Grechkina M. V. | Zendy; Arsentyev I. N. | Zendy; Vinokurov D. A. | Zendy; Tarasov I. S. | Zendy

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XRD, AFM and IR investigations of ordered AlGaAs 2 phase in epitaxial Al x Ga 1– x As/GaAs (100) heterostructures

Author(s) -

Domashevskaya E. P.,

Seredin P. V.,

Lukin A. N.,

Bityutskaya L. A.,

Grechkina M. V.,

Arsentyev I. N.,

Vinokurov D. A.,

Tarasov I. S.

Publication year - 2006

Publication title -

surface and interface analysis

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.52

H-Index - 90

eISSN - 1096-9918

pISSN - 0142-2421

DOI - 10.1002/sia.2306

Subject(s) - epitaxy , heterojunction , lattice constant , metalorganic vapour phase epitaxy , materials science , superstructure , alloy , atomic force microscopy , lattice (music) , crystallography , analytical chemistry (journal) , chemistry , nanotechnology , diffraction , optoelectronics , optics , physics , metallurgy , layer (electronics) , chromatography , acoustics , thermodynamics

The lattice constant of Al x Ga 1− x As epitaxial alloys with various Al‐As( x ) content is determined for Al x Ga 1− x As/GaAs (100) heterostructures grown by MOVPE epitaxy using X‐ray diffractometry and X‐ray back‐reflections method. An ordered AlGaAs 2 (superstructural) phase was found in epitaxial heterostructures for x ∼ 0.50. The lattice constant of this phase along c axis is smaller than the double lattice constants of an Al 0.50 Ga 0.50 As alloy. Infrared (IR) reflection spectra of lattice vibrations were investigated in epitaxial heterostructures of Al x Ga 1− x As/GaAs (100) with different concentrations of Al in cation sublattice. In the sample with x ∼ 0.50, besides two main vibration modes some additional ones were found that correspond to superstructure ordered phase AlGaAs 2 . Atomic‐force microscopy (AFM) of the sample surface with x ∼ 0.50 demonstrated the presence of areas with ordered nano‐relief having period of ∼115 nm that can be related with superstructure phase of AlGaAs 2 . Copyright © 2006 John Wiley & Sons, Ltd.

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