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Nitrogen depth profiling in thin oxynitride layers on silicon
Author(s) -
Budrevich A.,
Gladkikh A.,
Kaganer E.,
Sokolovsky M.
Publication year - 2006
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.2303
Subject(s) - silicon oxynitride , sputtering , silicon , nitrogen , nanometre , materials science , profiling (computer programming) , analytical chemistry (journal) , secondary ion mass spectrometry , ion , chemistry , nanotechnology , thin film , optoelectronics , computer science , composite material , silicon nitride , environmental chemistry , organic chemistry , operating system
This paper describes the results of nitrogen depth profiling in nanometer oxynitride layers on silicon, employing dynamic SIMS and time‐of‐flight SIMS. The surface transient effect was studied using surface encapsulation method, and the attractive possibility of time‐of‐flight SIMS profiling with low energy Cs sputtering was demonstrated. Quantification of the nitrogen profiles was performed after a detailed study of the matrix effect in order to correct for the ion yield difference at the oxynitride/silicon interface. Copyright © 2006 John Wiley & Sons, Ltd.