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Auger analysis and simulation of electronic states for Ge 33 As 12 Se 55 p‐ Si heterojunction
Author(s) -
Shchurova T. N.,
Savchenko N. D.,
Kondrat A. B.,
Opachko I. I.
Publication year - 2006
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.2297
Subject(s) - heterojunction , pseudopotential , band diagram , auger , atomic orbital , crystal (programming language) , amorphous solid , materials science , auger electron spectroscopy , electronic band structure , diagram , computation , chemistry , condensed matter physics , atomic physics , optoelectronics , crystallography , physics , electron , computer science , algorithm , quantum mechanics , database , programming language
We present experimental data on Auger analysis of the amorphous Ge 33 As 12 Se 55 film p‐ Si crystal heterojunction. The investigated depth profiles of the chemical components at the interface for the heterojunction revealed the presence of GeO 2 and As 2 O 3 from the film side and SiO 2 from the crystal side in the interfacial region. The energy level diagram of the heterojunction was constructed on the basis of linear combination of atomic orbitals method and pseudopotential. Comparison of the results of simulation with experimental data shows applicability of the suggested theoretical approach to the computation of the energy band diagram of amorphous–crystalline heterojunctions taking into account the presence of electronic states at the interface. Copyright © 2006 John Wiley & Sons, Ltd.