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Characterization of hydrogen contained in passivated poly‐Si and microcrystalline‐Si by ERDA technique
Author(s) -
Boldyryeva H.,
Honda S.,
Mackova A.,
Mates T.,
Fejfar A.,
Kočka J.
Publication year - 2006
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.2283
Subject(s) - elastic recoil detection , plasma enhanced chemical vapor deposition , passivation , hydrogen , thin film , materials science , microcrystalline , crystallinity , chemical vapor deposition , analytical chemistry (journal) , amorphous solid , silicon , chemical engineering , chemistry , nanotechnology , optoelectronics , composite material , crystallography , layer (electronics) , organic chemistry , engineering
Abstract Polycrystalline Si (poly‐Si) thin films produced by atmospheric pressure chemical vapour deposition (APCVD) were treated by hydrogen passivation in the remote plasma system. Such materials could be potentially used for photovoltaics applications. The purpose of the present study was to investigate the effects of hydrogen passivation on poly‐Si thin film properties, such as hall mobility and photoluminescence. Elastic recoil detection analysis (ERDA) was used to determine the depth distribution and concentration of hydrogen. ERDA was also applied to determine the hydrogen content of amorphous/microcrystalline silicon produced by plasma enhanced chemical vapour deposition (PECVD) with various dilution ratios of the working gases (H 2 and SiH 4 ). A dependence of the hydrogen content on the crystallinity was observed. Copyright © 2006 John Wiley & Sons, Ltd.