X‐ray photoelectron spectroscopy study of energy‐band alignments of Lu 2 O 3  on Ge | Zendy

Perego M. | Zendy; Seguini G. | Zendy; Scarel G. | Zendy; Fanciulli M. | Zendy

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X‐ray photoelectron spectroscopy study of energy‐band alignments of Lu 2 O 3 on Ge

Author(s) -

Perego M.,

Seguini G.,

Scarel G.,

Fanciulli M.

Publication year - 2006

Publication title -

surface and interface analysis

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.52

H-Index - 90

eISSN - 1096-9918

pISSN - 0142-2421

DOI - 10.1002/sia.2268

Subject(s) - x ray photoelectron spectroscopy , heterojunction , analytical chemistry (journal) , valence band , lutetium , conduction band , germanium , oxide , chemistry , valence (chemistry) , photoemission spectroscopy , semiconductor , substrate (aquarium) , materials science , band gap , silicon , optoelectronics , electron , nuclear magnetic resonance , physics , oceanography , organic chemistry , chromatography , quantum mechanics , yttrium , geology

X‐ray photoelectron spectroscopy (XPS) was used to investigate the band alignment of lutetium oxide films with a germanium substrate. Lu 2 O 3 films were grown on Ge (100) by atomic layer deposition. The conduction ‐ (CBO) and valence ‐ (VBO) band offsets of the Lu 2 O 3 /Ge heterojunction were determined to be 2.2 ± 0.1 and 2.9 ± 0.1 eV respectively. Internal photoemission measurements performed on metal‐oxide‐semiconductor devices gave a CBO of 2.1 ± 0.1 eV and a VBO of 3.0 eV, in excellent agreement, within the experimental error, with the values obtained by XPS. Copyright © 2006 John Wiley & Sons, Ltd.

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