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Comparative study of the interfacial characteristics of sputter‐deposited HfO 2 on native SiO 2 /Si (100) using in situ XPS, AES and GIXR
Author(s) -
Tan Ruiqin,
Azuma Yasushi,
Kojima Isao
Publication year - 2006
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.2263
Subject(s) - x ray photoelectron spectroscopy , sputtering , analytical chemistry (journal) , sputter deposition , materials science , auger , thin film , in situ , auger electron spectroscopy , chemistry , chemical engineering , nanotechnology , physics , organic chemistry , chromatography , atomic physics , engineering , nuclear physics
Abstract The HfO 2 /SiO 2 /Si, Hf/SiO 2 /Si and HfO 2 /Hf/SiO 2 /Si interfaces formed by rf magnetron sputtering deposition were comparatively investigated using in situ high resolution X‐ray photoelectron spectroscopy, auger depth profiling and grazing incident X‐ray reflectivity (GIXR). The reactive deposition of HfO 2 directly on native SiO 2 /Si (100) leads to an extraordinarily thick Si‐rich interface of about 3.33 nm, which will limit the capacitance of high‐κ films. To suppress the growth of the unexpected interface, it has been found that the pre‐deposition of Hf (about 1 nm) is effective. The Hf radicals reduce SiO 2 to metallic Si to form HfO 2 and partly result in HfSi x . After subsequent reactive deposition of HfO 2 on Hf/SiO 2 /Si stacks, the Hf‐rich silicates interlayer is as thin as 1.88 nm, calculated as an equivalent thickness of SiO 2 . All the XPS, AES depth profiling and GIXR results show a good coincidence with each other. Copyright © 2006 John Wiley & Sons, Ltd.