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Influence of temperature on electrical characteristics of CH x /porous silicon/Si sensing device
Author(s) -
Zouadi N.,
Belhousse S.,
Cheraga H.,
Ouadah Y.,
Sam S.,
Ouchabane M.,
Henda K.,
Mahmoudi B.,
Gabouze N.
Publication year - 2006
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.2247
Subject(s) - methane , argon , porous silicon , porosity , atmospheric temperature range , capacitance , analytical chemistry (journal) , silicon , materials science , operating temperature , chemistry , chemical engineering , optoelectronics , electrode , composite material , environmental chemistry , organic chemistry , electrical engineering , thermodynamics , physics , engineering
Recently, a gas sensing device based on hydrocarbons CH x /porous silicon structure was fabricated. The porous samples were coated with hydrocarbons groups deposited by plasma of methane under argon atmosphere. We demonstrated that the structure can be used for detecting a low concentration of a large variety of gases such as ethylene, ethane, CO 2 , H 2 and so on, at room temperature. In the present work, the sensor has been used as sensing material to detect CO 2 gas as a function of temperature. Current‐voltage and capacitance‐voltage characterisations show that sensor characteristics are modified by the temperature environment in the presence of gas. Sensitivity of the devices, response time and impedance response to gases exposure at different temperatures have been investigated. In conclusion, the sensor shows a rapid and reversible response to low concentration of the gas studied at temperatures in the range 25–100 °C. Copyright © 2006 John Wiley & Sons, Ltd.