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Investigation of the interface manipulation in SiC(100) on Si(100) with isovalent impurities
Author(s) -
Pezoldt J.,
Morales F. M.,
Zgheib Ch.,
Förster Ch.,
Stauden Th.,
Ecke G.,
Wang Ch.,
Masri P.
Publication year - 2006
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.2240
Subject(s) - impurity , heterojunction , transmission electron microscopy , materials science , substrate (aquarium) , silicon , layer (electronics) , interface (matter) , silicon carbide , crystallography , analytical chemistry (journal) , optoelectronics , chemistry , nanotechnology , metallurgy , composite material , oceanography , organic chemistry , chromatography , capillary number , capillary action , geology
Abstract SIMS and transmission electron microscopy studies revealed an improvement of the SiC/Si(100) heterostructure properties if isovalent atoms with larger atomic dimensions than Si and C were used to modify the interface. The Ge incorporation at the interface suppresses the outdiffusion of Si from the substrate to the surface of the growing SiC layer and, therefore, impedes surface and interface roughening as well as the formation of voids at the SiC/Si interface. SIMS measurements obtained revealed that Ge remains at SiC/Si interface independently of the predeposited amount on Si(100) substrates. Copyright © 2006 John Wiley & Sons, Ltd.