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Temperature dependence of band alignments in ultrathin Hf–Al–O and Al 2 O 3 films on p ‐Si (100)
Author(s) -
Jin H.,
Oh S. K.,
Kang H. J.,
Lee Y. S.,
Cho M. H.
Publication year - 2006
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.2203
Subject(s) - x ray photoelectron spectroscopy , annealing (glass) , valence band , atomic layer deposition , thin film , spectral line , conduction band , semimetal , analytical chemistry (journal) , band gap , electron , materials science , chemistry , nuclear magnetic resonance , optoelectronics , nanotechnology , physics , metallurgy , quantum mechanics , astronomy , chromatography
Annealing temperature dependence of band alignments in Hf–Al–O and Al 2 O 3 thin films, grown on p ‐Si(100) by atomic layer deposition (ALD), has been studied by utilizing XPS and reflection electron energy loss spectroscopy (REELS). Band gaps and valence band offsets were estimated from the onset of REELS and valence band spectra of XPS, respectively. Hf–Al–O thin film is found to have asymmetric barrier heights for electrons and holes and reveals an increasing trend in the conduction band offsets after annealing treatment, while Al 2 O 3 film shows a nearly symmetric band offsets. Copyright © 2006 John Wiley & Sons, Ltd.