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The peculiarities of electronic structure of Si nanocrystals formed in SiO 2 and Al 2 O 3 matrix with and without P doping
Author(s) -
Kovalev Anatoly,
Wainstein Dmitry,
Tetelbaum David,
Mikhailov Alexey
Publication year - 2006
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.2190
Subject(s) - x ray photoelectron spectroscopy , doping , nanocrystal , annealing (glass) , photoluminescence , ion , materials science , nanostructure , spectroscopy , electronic structure , analytical chemistry (journal) , nanotechnology , chemistry , optoelectronics , physics , nuclear magnetic resonance , computational chemistry , metallurgy , organic chemistry , quantum mechanics , chromatography
The system of the nanoinclusions of Si in the SiO 2 and Al 2 O 3 matrixes (SiO 2 :Si, Al 2 O 3 :Si) attracts great attention owing to its ability to the luminesce in the visible and near‐IR range of the spectrum. The influence of P‐ion alloying on the electronic structure of nanocomposites was investigated. The P‐ion doping and post‐annealing at T = 1000 °C (2 hours) result in the enhancement of the photoluminescence (PL) peak connected with the Si nanocrystals. The electronic structure was investigated by X‐ray photoelectron spectroscopy (XPS) and high‐resolution electron energy losses spectroscopy (HREELS) methods. Ion surface modification and annealing form the special nanostructure with Si nanocrystals in SiO 2 and Al 2 O 3 matrixes having high density of interfaces with special atomic structure and various degree of oxidation of Si atoms on the boundaries. HREELS investigations show that P‐ion doping increases the probability of interband transitions in SiO 2 :Si and Al 2 O 3 :Si composites. Copyright © 2006 John Wiley & Sons, Ltd.