Premium
Characterization of a HfO 2 /SiO 2 /Si system by X‐ray reflection and X‐ray emission spectroscopies
Author(s) -
André J.M.,
Filatova E. O.,
Renault O.,
Damlencourt J.F.,
Martin F.,
Jonnard P.
Publication year - 2006
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.2133
Subject(s) - silicon , analytical chemistry (journal) , xanes , x ray , valence (chemistry) , spectroscopy , oxide , emission spectrum , silicon oxide , absorption spectroscopy , x ray spectroscopy , reflection (computer programming) , materials science , chemistry , spectral line , optics , silicon nitride , optoelectronics , physics , organic chemistry , chromatography , quantum mechanics , astronomy , computer science , metallurgy , programming language
X‐ray reflection spectroscopy (XRS) and X‐ray emission spectroscopy (XES) were used to characterize a HfO 2 /SiO 2 /Si system. XRS performed at different glancing angles around the O K absorption edge and analysed with Kramers–Kronig transform (KKT) enabled the depth profilometry of the sample and provided information on the local physico‐chemical environment of the oxygen atoms. The physico‐chemical state of silicon atoms present in the HfO 2 /SiO 2 /Si system was studied by XES induced by electrons. From the analysis of the Si 3p occupied valence states, the very thin oxide interfacial layer was characterized. From the simulation of the spectra and the calculation of the emissive thicknesses, the silicon oxide thickness was determined to be one or two monolayers. Copyright © 2006 John Wiley & Sons, Ltd.