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Use of Monte Carlo models in the development and validation of CD operators
Author(s) -
Frase Carl Georg,
HäßlerGrohne Wolfgang
Publication year - 2005
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.2113
Subject(s) - monte carlo method , metrology , laser linewidth , statistical physics , monte carlo molecular modeling , monte carlo method in statistical physics , dynamic monte carlo method , dimension (graph theory) , kinetic monte carlo , field (mathematics) , hybrid monte carlo , computer science , physics , optics , mathematics , statistics , markov chain monte carlo , laser , pure mathematics
In this article, different applications of Monte Carlo simulations in scanning electron microscope (SEM) critical dimension (CD) metrology are presented. A first field of application is the analysis of image formation that leads to functional descriptions of secondary electron (SE) signal profiles. From this, algorithms are defined to evaluate the linewidth of microstructures. Monte Carlo generated images are used to validate CD operators and to estimate model‐induced contributions to the CD uncertainty budget. New challenges and new fields of application for Monte Carlo simulations in CD metrology are discussed. Copyright © 2005 John Wiley & Sons, Ltd.