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Modeling of imaging processes in the low‐vacuum SEM
Author(s) -
Thiel Bradley L.
Publication year - 2005
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.2112
Subject(s) - electron , contrast (vision) , ion , scanning electron microscope , chemical physics , charge (physics) , secondary electrons , ultra high vacuum , nanotechnology , molecule , chemistry , atomic physics , materials science , physics , optics , nuclear physics , quantum mechanics , organic chemistry
The presence of a gas in the specimen chamber of low‐vacuum scanning electron microscopes (SEMs) gives rise to a number of interactions that are not found in their high‐vacuum counterparts. Many of these interactions are integral to the specimen charge neutralizing capabilities of these instruments. However, these interactions, and the electronic charge state of the specimen, give rise to a number of processes that influence, and sometimes even dominate, secondary electron contrast. As many of the processes are stochastic in nature, and depend on discrete interactions between electrons, gaseous ions, neutral molecules, and the specimen surface, modeling can offer important insights for contrast interpretation. This paper discusses these interactions and the mechanisms through which contrast is influenced. Copyright © 2005 John Wiley & Sons, Ltd.