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Anisotropy analysis of energy in Ag/Si twist interface
Author(s) -
Xin Hong,
Zhang JianMin,
Wei XiuMei,
Xu KeWei
Publication year - 2005
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.2054
Subject(s) - twist , anisotropy , energy minimization , atom (system on chip) , crystallography , substrate (aquarium) , materials science , silicon , condensed matter physics , chemistry , computational chemistry , physics , geometry , optics , optoelectronics , mathematics , oceanography , computer science , embedded system , geology
The energies in three combinations of Ag(001)/Si(111), Ag(011)/Si(111) and Ag(111)/Si(111) twist boundaries have been calculated using the modified embedded atom method (MEAM). The results show that the interface energies corresponding to Ag(111)/Si(111), Ag(001)/Si(111) and Ag(011)/Si(111) increase successively and the lowest energies 365, 717.7 and 996.1 mJ m −2 corresponding to each interface appear at twist angles θ of 30, 0 and 25.24°, respectively. Considering minimization of interface energy, we can conclude that the Ag films deposited on Si(111) substrate will result in a (111) preferred orientation, especially at a twist angle of θ = 30°. Copyright © 2005 John Wiley & Sons, Ltd.
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