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CdTe and anodic oxides on Hg 1− x Cd x Te: interface and compositional analysis using Rutherford backscattering spectroscopy
Author(s) -
Srivastava P.,
Mohapatra S.,
Pal R.,
Vyas H. P.,
Sekhar B. R.,
Sehgal H. K.
Publication year - 2005
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.2050
Subject(s) - cadmium telluride photovoltaics , rutherford backscattering spectrometry , analytical chemistry (journal) , spectroscopy , chemistry , anode , diffusion , materials science , thin film , electrode , nanotechnology , physics , chromatography , quantum mechanics , thermodynamics
The composition and interfacial region has been studied for CdTe and anodic oxides deposited/grown on Hg 1− x Cd x Te using Rutherford backscattering spectroscopy. The interfacial region for the CdTe/Hg 1− x Cd x Te sample was found to be ∼35 nm, in which out‐diffusion of Hg was observed. The interfacial region in the case of anodic oxides/Hg 1− x Cd x Te was found to be very small, <10 nm (of the order of experimental resolution), in which the Hg concentration increases steeply and the oxygen concentration decreases. Passivant and bulk compositions also have been obtained in both cases. Copyright © 2005 John Wiley & Sons, Ltd.