CdTe and anodic oxides on Hg 1− x  Cd  x  Te: interface and compositional analysis using Rutherford backscattering spectroscopy | Zendy

Srivastava P. | Zendy; Mohapatra S. | Zendy; Pal R. | Zendy; Vyas H. P. | Zendy; Sekhar B. R. | Zendy; Sehgal H. K. | Zendy

Premium

CdTe and anodic oxides on Hg 1− x Cd x Te: interface and compositional analysis using Rutherford backscattering spectroscopy

Author(s) -

Srivastava P.,

Mohapatra S.,

Pal R.,

Vyas H. P.,

Sekhar B. R.,

Sehgal H. K.

Publication year - 2005

Publication title -

surface and interface analysis

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.52

H-Index - 90

eISSN - 1096-9918

pISSN - 0142-2421

DOI - 10.1002/sia.2050

Subject(s) - cadmium telluride photovoltaics , rutherford backscattering spectrometry , analytical chemistry (journal) , spectroscopy , chemistry , anode , diffusion , materials science , thin film , electrode , nanotechnology , physics , chromatography , quantum mechanics , thermodynamics

The composition and interfacial region has been studied for CdTe and anodic oxides deposited/grown on Hg 1− x Cd x Te using Rutherford backscattering spectroscopy. The interfacial region for the CdTe/Hg 1− x Cd x Te sample was found to be ∼35 nm, in which out‐diffusion of Hg was observed. The interfacial region in the case of anodic oxides/Hg 1− x Cd x Te was found to be very small, <10 nm (of the order of experimental resolution), in which the Hg concentration increases steeply and the oxygen concentration decreases. Passivant and bulk compositions also have been obtained in both cases. Copyright © 2005 John Wiley & Sons, Ltd.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research