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Wedge‐shaped and flat cross‐sections for quantitative characterization of the electrostatic potential distributions across p‐n junctions by electron holography
Author(s) -
Wang Zhouguang,
Kato Takeharu,
Hirayama Tsukasa,
Kato Naoko,
Sasaki Katsuhiro,
Saka Hiroyasu
Publication year - 2005
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1969
Subject(s) - wedge (geometry) , electron holography , holography , semiconductor , materials science , electron , cathode ray , focused ion beam , optics , molecular physics , ion , chemistry , optoelectronics , physics , organic chemistry , quantum mechanics
Both flat and wedge‐shaped cross‐sectional specimens were fabricated by focused ion beam (FIB) milling of the same implanted Si/Si p‐n junction sample. The junction potential distributions in both kinds of specimens were examined by using electron holography, and their differences were compared. Some parameters needed for characterizing junction potential distributions quantitatively, such as the thickness of the electrically dead layer on the surface, can be obtained only from wedge‐shaped cross‐sections, and it is shown that the two‐dimensional potential distributions in practical semiconductor devices can be measured accurately only by combining the results obtained using both of these specimen geometries. Copyright © 2005 John Wiley & Sons, Ltd.