Premium
Photoluminescence characterization of nano‐size defects in sub‐surface region of silicon wafers
Author(s) -
Tanahashi Katsuto,
YamadaKaneta Hiroshi
Publication year - 2005
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1966
Subject(s) - photoluminescence , wafer , materials science , silicon , optoelectronics , ultraviolet , excited state , oxide , spectroscopy , analytical chemistry (journal) , optics , chemistry , atomic physics , physics , quantum mechanics , chromatography , metallurgy
The sub‐surface defects in annealed wafers with an oxide layer are characterized by ultraviolet‐excited photoluminescence spectroscopy and mapping. Two types of defects are detected as a reduction of band‐edge emission in the region determined to be defect‐free by laser scattering tomography (LST): an interface gap state between silicon and the oxide layer, and a nitrogen‐related defect (which is below the detection limit of LST). Copyright © 2005 John Wiley & Sons, Ltd.