Photoluminescence characterization of nano‐size defects in sub‐surface region of silicon wafers | Zendy

Tanahashi Katsuto | Zendy; YamadaKaneta Hiroshi | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Photoluminescence characterization of nano‐size defects in sub‐surface region of silicon wafers

Author(s) -

Tanahashi Katsuto,

YamadaKaneta Hiroshi

Publication year - 2005

Publication title -

surface and interface analysis

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.52

H-Index - 90

eISSN - 1096-9918

pISSN - 0142-2421

DOI - 10.1002/sia.1966

Subject(s) - photoluminescence , wafer , materials science , silicon , optoelectronics , ultraviolet , excited state , oxide , spectroscopy , analytical chemistry (journal) , optics , chemistry , atomic physics , physics , quantum mechanics , chromatography , metallurgy

The sub‐surface defects in annealed wafers with an oxide layer are characterized by ultraviolet‐excited photoluminescence spectroscopy and mapping. Two types of defects are detected as a reduction of band‐edge emission in the region determined to be defect‐free by laser scattering tomography (LST): an interface gap state between silicon and the oxide layer, and a nitrogen‐related defect (which is below the detection limit of LST). Copyright © 2005 John Wiley & Sons, Ltd.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research