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Characterization of electrically inactive arsenic atoms in heavily arsenic‐doped Si
Author(s) -
Kikuchi Y.,
Goto Y.
Publication year - 2005
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1964
Subject(s) - arsenic , vacancy defect , doping , wafer , annealing (glass) , materials science , lattice (music) , lattice constant , characterization (materials science) , chemistry , crystallography , analytical chemistry (journal) , atomic physics , nanotechnology , optoelectronics , metallurgy , physics , environmental chemistry , acoustics , diffraction , optics
The origin of electrically inactive arsenic (As) atoms in heavily As‐doped Si(100) wafers after rapid thermal annealing has been studied by using several advanced techniques. Direct experimental evidence linking the formation of As–vacancy complexes to the inactive As atoms is shown. Approximately 78% of the As atoms sit on the Si substitutional sites in spite of their inactivity, However, the local strain relating to the implanted As atoms is higher than expected for the implanted As concentration. In addition, the Si lattice constant expanded as the As concentration increased. The results indicate that most of the As atoms in the heavily doped region exist in a uniform layer of As–vacancy complexes combined with substitutional As atoms. Copyright © 2005 John Wiley & Sons, Ltd.