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Deconvolution of SIMS depth profiles of As multiple delta layers in silicon
Author(s) -
Lee J. W.,
Kim K. J.,
Kim H. K.,
Moon D. W.
Publication year - 2005
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.1958
Subject(s) - deconvolution , silicon , analytical chemistry (journal) , doping , chemistry , materials science , optics , optoelectronics , physics , chromatography , organic chemistry
We investigated the deconvolution of SIMS depth profiles of arsenic multiple delta layers in silicon. Two samples with spacings of 50 and 5/10 nm between the arsenic‐doped silicon delta layers of thickness 1.0 and 0.5 nm, respectively, were used for the study. Time‐of‐flight SIMS analysis with sputtering of 0.5 keV Cs + at 45° incident angle has been performed to obtain the SIMS depth profile. We observed five clearly separated peaks in the 50 nm spacing sample but eight poorly separated peaks in the 5/10 nm spacing sample. After deconvolution, however, we could obtain very thin and sharp clearly separated peaks in both samples. The separability of the overlapping peaks was much improved, especially in the region of 5 nm spacing. An improvement in depth resolution by a factor of ∼3 and a gain in maximum peak intensity by a factor of ∼4 were achieved. We could not find any significant loss or gain of peak intensity during the deconvolution procedure. The physical validity of the deconvolution method is supported by non‐destructive medium‐energy ion scattering spectroscopy analysis, which can measure the thickness of the arsenic‐doped silicon delta layer in a silicon matrix quantitatively. Copyright © 2005 John Wiley & Sons, Ltd.